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HY62CT08081E Series
32Kx8bit CMOS SRAM
Document Title
32K x8 bit 5.0V Low Power Slow SRAM
Revision History
Revision No 00 01 History Initial Marking Information Add Revised - DC / AC Characteristics - AC Test Condition Add : 5pF Test Load Revised - Remove L-Part - Change LL-Part Isb1 Limit @E.T/I.T : 15uA => 20uA Revised - Marking Information Change : SOP Type Changed Logo - HYUNDAI -> hynix - Marking Information Change Draft Date Nov.01.2000 Dec.05.2000 Remark Preliminary Preliminary
02
Feb.13.2001
Final
03
Feb.21.2001
Final
04
Apr.30.2001
Final
This document is a general product description and is subject to change without notice. Hynix Electronics does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev 04 / Apr. 2001 Hynix Semiconductor
HY62CT08081E Series
DESCRIPTION
The HY62CT08081E is a high-speed, low power and 32,786 X 8-bits CMOS Static Random Access Memory fabricated using Hynix's high performance CMOS process technology. It is suitable for use in low voltage operation and battery back-up application. This device has a data retention mode that guarantees data to remain valid at the minimum power supply voltage of 2.0 volt.
FEATURES
* * * * Fully static operation and Tri-state output TTL compatible inputs and outputs Low power consumption Battery backup - 2.0V(min.) data retention * Standard pin configuration - 28 pin 600mil PDIP - 28 pin 330mil SOP - 28 pin 8x13.4 mm TSOP-I (Standard) Standby Current(uA) LL 10 20 20 Temperature (C) 0~70(Normal) -25~85(Extended) -40~85(Industrial)
Product Voltage No. (V) HY62CT08081E-C 5.0 HY62CT08081E-E 5.0 HY62CT08081E-I 5.0 Note 1. Current value is max.
Speed (ns) 55/70/85 55/70/85 55/70/85
Operation Current(mA) 10 10 10
PIN CONNECTION
A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 Vcc /WE A13 A8 A9 A11 /OE A10 /CS I/O8 I/O7 I/O6 I/O5 I/O4
A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 Vss
1 2 3 4 5 6 7 8 9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
Vcc /WE A13 A8 A9 A11 /OE A10 /CS I/O8 I/O7 I/O6 I/O5 I/O4
/OE A11 A9 A8 A13 /WE Vcc A14 A12 A7 A6 A5 A4 A3
1 2 3 4 5 6 7 8 9 10 11 12 13 14
28 27 26 25 24 23 22 21 20 19 18 17 16 15
A10 /CS I/O8 I/O7 I/O6 I/O5 I/O4 Vss I/O3 I/O2 I/O1 A0 A1 A2
PDIP
SOP
TSOP-I(Standard)
PIN DESCRIPTION
Pin Name /CS /WE /OE A0 ~ A14 I/O1 ~ I/O8 Vcc Vss Pin Function Chip Select Write Enable Output Enable Address Inputs Data Input/Output Power(+5.0V) Ground
A0
BLOCK DIAGRAM
SENSE AMP ROW DECODER ADD INPUT BUFFER I/O1 OUTPUT BUFFER I/O8
COLUMN DECODER
A14 /CS /OE /WE
Rev 04 / Apr. 2001
CONTROL LOGIC
WRITE DRIVER
MEMORY ARRAY 512x512
2
HY62CT08081E Series
ORDERING INFORMATION
Part No. HY62CT08081E-DPC HY62CT08081E-DPE HY62CT08081E-DPI HY62CT08081E-DGC HY62CT08081E-DGE HY62CT08081E-DGI HY62CT08081E-DTC HY62CT08081E-DTE HY62CT08081E-DTI Speed 55/70/85 55/70/85 55/70/85 55/70/85 55/70/85 55/70/85 55/70/85 55/70/85 55/70/85 Power LL-part LL-part LL-part LL-part LL-part LL-part LL-part LL-part LL-part Temp 0 to 70C -25 to 85C -40 to 85C 0 to 70C -25 to 85C -40 to 85C 0 to 70C -25 to 85C -40 to 85C Package PDIP
SOP
TSOP-I Standard
ABSOLUTE MAXIMUM RATING (1)
Symbol Vcc, VIN, VOUT TA Parameter Power Supply, Input/Output Voltage Operating Temperature HY62CT08081E-C HY62CT08081E-E HY62CT08081E-I Storage Temperature Power Dissipation Data Output Current Lead Soldering Temperature & Time Rating -0.3 to 7.0 0 to 70 -25 to 85 -40 to 85 -65 to 150 1.0 50 260 *10 Unit V C C C C W mA C*sec
TSTG PD IOUT TSOLDER Note 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is stress rating only and the functional operation of the device under these or any other conditions above those indicated in the operation of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS
Symbol Parameter Min. Vcc Power Supply Voltage 4.5 Vss Ground 0 VIH Input High Voltage 2.2 VIL Input Low Voltage -0.3(1) Note 1. VIL = -3.0V for pulse width less than 50ns Typ. 5.0 0 Max. 5.5 0 Vcc+0.3 0.8 Unit V V V V
Rev 04 / Apr. 2001
2
HY62CT08081E Series
TRUTH TABLE
/WE /OE Mode /CS H X X Standby L H H Output Disabled L H L Read L L X Write Note 1. H=VIH, L=VIL, X=Don't Care I/O Operation High-Z High-Z Data Out Data In
DC CHARACTERISTICS
Vcc = 5V 10%, TA = 0C to 70C (Normal) / -25C to 85C (Extended) / -40C to 85C (Industrial), unless otherwise specified. Symbol Parameter Test Condition Min. Typ. Max. ILI Input Leakage Current Vss < VIN < Vcc -1 1 ILO Output Leakage Current Vss < VOUT < Vcc, /CS = VIH or -1 1 /OE = VIH or /WE = VIL Icc Operating Power Supply /CS = VIL, 10 Current VIN = VIH or VIL, II/O = 0mA ICC1 Average Operating Current /CS = VIL, VIN = VIH or VIL, 50 Min. Duty Cycle = 100%, II/O = 0mA ISB TTL Standby Current /CS= VIH, 1 (TTL Inputs) VIN = VIH or VIL ISB1 CMOS Standby Current /CS > Vcc - 0.2V, 10 0~70C (CMOS Inputs) VIN > Vcc - 0.2V or VIN < Vss + 0.2V 20 -25~85C or -40~85C VOL Output Low Voltage IOL = 2.1mA 0.4 VOH Output High Voltage IOH = -1.0mA 2.4 Note : Typical values are at Vcc =5.0V, TA = 25C
Unit uA uA mA mA mA uA uA V V
Rev 04 / Apr. 2001
3
HY62CT08081E Series
AC CHARACTERISTICS
Vcc = 5V 10%, TA = 0C to 70C (Normal) / -25C to 85C (Extended) / -40C to 85C (Industrial) unless otherwise specified. -55 -70 -85 # Symbol Parameter Min. Max. Min. Max. Min Max. READ CYCLE 1 tRC Read Cycle Time 55 70 85 2 tAA Address Access Time 55 70 85 3 tACS Chip Select Access Time 55 70 85 4 tOE Output Enable to Output Valid 25 35 45 5 tCLZ Chip Select to Output in Low Z 10 10 10 6 tOLZ Output Enable to Output in Low Z 5 5 5 7 tCHZ Chip Disable to Output in High Z 0 20 0 30 0 30 8 tOHZ Out Disable to Output in High Z 0 20 0 30 0 30 9 tOH Output Hold from Address Change 5 5 5 WRITE CYCLE 10 tWC Write Cycle Time 55 70 85 11 tCW Chip Selection to End of Write 45 60 75 12 tAW Address Valid to End of Write 45 60 75 13 tAS Address Set-up Time 0 0 0 14 tWP Write Pulse Width 40 50 60 15 tWR Write Recovery Time 0 0 0 16 tWHZ Write to Output in High Z 0 20 0 25 0 30 17 tDW Data to Write Time Overlap 25 30 40 18 tDH Data Hold from Write Time 0 0 0 19 tOW Output Active from End of Write 5 5 5 -
Unit ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
AC TEST CONDITIONS
TA = 0C to 70C (Normal) / -25C to 85C (Extended) / -40C to 85C (Industrial) unless otherwise specified. Parameter Value Input Pulse Level 0.8V to 2.4V Input Rise and Fall Time 5ns Input and Output Timing Reference Level 1.5V Output Load tCLZ,tOLZ,tCHZ,tOHZ,tWHZ,tOW CL = 5pF + 1TTL Load Others CL = 100pF + 1TTL Load
Rev 04 / Apr. 2001
4
HY62CT08081E Series
AC TEST LOADS
TTL
CL(1)
Note : Including jig and scope capacitance
CAPACITANCE
TA = 25C, f = 1.0MHz Symbol Parameter CIN Input Capacitance CI/O Input /Output Capacitance Condition VIN = 0V VI/O = 0V Max. 6 8 Unit pF pF
Note : These parameters are sampled and not 100% tested
Rev 04 / Apr. 2001
5
HY62CT08081E Series
TIMING DIAGRAM
READ CYCLE 1
tRC ADDR tAA OE tOE tOLZ CS tACS tCLZ Data Out High-Z Data Valid tOHZ tCHZ tOH
Note(READ CYCLE): 1. tCHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and arenot referenced to output voltage levels. 2. At any given temperature and voltage condition, tCHZ max. is less than tCLZ min. both for a given device and from device to device. 3. /WE is high for the read cycle.
READ CYCLE 2
tRC ADDR tAA tOH Data Out Previous Data Data Valid tOH
Note(READ CYCLE): 1. /WE is high for the read cycle. 2. Device is continuously selected /CS= VIL. 3. /OE =VIL.
Rev 04 / Apr. 2001
6
HY62CT08081E Series
WRITE CYCLE 1(/OE Clocked)
tWC ADDR
OE tAW tCW CS tAS WE tDW Data In tOHZ
Data Out
tWP
tWR
tDH Data Valid
WRITE CYCLE 2 (/OE Low Fixed)
tWC ADDR tAW tCW CS tAS WE tDW Data In tWHZ Data Out tDH Data Valid tOW (7) (8) tWP tWR
Rev 04 / Apr. 2001
7
HY62CT08081E Series
Notes(WRITE CYCLE): 1. A write occurs during the overlap of a low /CS and a low /WE. A write begins at the latest transition among /CS going low and /WE going low: A write ends at the earliest transition among /CS going high and /WE going high. tWP is measured from the beginning of write to the end of write. 2. tCW is measured from the later of /CS going low to the end of write . 3. tAS is measured from the address valid to the beginning of write. 4. tWR is measured from the end of write to the address change. tWR is applied in case a write ends as /CS, or /WE going high. 5. If /OE and /WE are in the read mode during this period, and the I/O pins are in the output low-Z state, input of opposite phase of the output must not be applied because bus contention can occur. 6. If /CS goes low simultaneously with /WE going low, or after /WE going low, the outputs remain in high impedance state. 7. DOUT is the same phase of the latest written data in this write cycle. 8. DOUT is the read data of the new address.
DATA RETENTION CHARACTERISTIC
TA = 0C to 70C (Normal) / -25C to 85C (Extended) / -40C to 85C (Industrial) unless otherwise specified. Symbol Parameter Test Condition Min VDR Vcc for Data Retention CS>Vcc-0.2V, 2.0 VIN>Vcc - 0.2V or VINVcc - 0.2V, VIN>Vcc - 0.2V or -25~85C or VINTyp 0.5 0.5 -
Max 5 8 -
Unit V uA uA ns ns
DATA RETENTION TIMING DIAGRAM
VCC 4.5V tCDR DATA RETENTION MODE tR
2.2V VDR CS>VCC-0.2V CS VSS
Rev 04 / Apr. 2001
8
HY62CT08081E Series
PACKAGE INFORMATION
28pin 600mil Dual In-Line Package(Blank) *
UNIT : INCH(mm)
MAX. MIN.
1.467(37.262) 1.447(36.754) 0.600(15.240)BSC 0.090(2.286) 0.070(1.778) 0.065(1.650) 0.050(1.270) 0.155(3.937) 0.145(3.683) 0.035(0.889) 0.020(0.508) 0.550(13.970) 0.530(13.462)
0.140(3.556) 0.021(0.533) 0.100(2.54)BSC 0.015(0.381) 0.120(3.048)
3 deg 11 deg
0.014(0.356) 0.008(0.200)
28pin 330mil Small O utline Package(FW)
0.346(8.788) 0.338(8.585) 0.480(12.192) 0.460(11.684)
UNIT : INCH(mm)
MAX . MIN.
0.728(18.491) 0.720(18.288)
0.110(2.794) 0.094(2.388) 0.014(0.356) 0.002(0.051) 0.012(0.305) 0.008(0.203) 0.050(1.270) 0.030(0.762)
0.050(1.270)BSC
0.020(0.508) 0.014(0.356)
Rev 04 / Apr. 2001
9
HY62CT08081E Series
28pin 8x13.4mm Thin Small Outline Package Standard(T)
UNIT : INCH(mm)
MAX. MIN.
0.468(11.9) 0.460(11.7) 0.536(13.6) 0.520(13.2)
0.319(8.1) 0.311(7.9)
0.040(1.02) 0.036(0.91) 0.008(0.20) 0.002(0.05)
0.027(0.7) 0.012(0.3)
0.008(0.2) 0.004(0.1)
0.022(0.55 BSC)
Rev 04 / Apr. 2001
10
HY62CT08081E Series
MARKING INFORMATION
Package
h y Y O n 6 R i
Marking Example
x C A T 0 x 8 x 1 x y E x y c x w s x w s x p t x
PDIP
H K
2 E
h
y Y O
n 6 R
i 2 E
x C A T 0 8 1
y E
y c
w s
w s
p t
SOP
H K
h
y Y O
n 6 R
i 2 E
x C A T 0 8 1
y E
y c
w s
w s
p t
TSOP-I
H K
Index
* hynix * KOREA * HY62CT081E * yy * ww *p *c : hynix Logo : Origin Country : Part Name - HY62CT081E : HY62CT08081E : Year ( ex : 00 = year 2000, 01 = year 2001 ) : Work Week ( ex : 12 = ww12 ) : Process Code : Power Consumption -L : Low Power -D : Low Low Power : Speed - 55 : 55ns - 70 : 70ns : Temperature -C : Commercial ( 0 ~ 70 C ) -E : Extended ( -25 ~ 85 C ) -I : Industrial ( -40 ~ 85 C ) : Lot Number
* ss
*t
* xxxxxxxx Note - Capital Letter - Small Letter
: Fixed Item : Non-fixed Item ( Except hynix )
Rev 04 / Apr. 2001
11

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